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HGTA32N60E2
April 1995
32A, 600V N-Channel IGBT
Package
JEDEC MO-093AA (5 LEAD TO-218)
5 EMITTER COLLECTOR (FLANGE) 4 EMITTER KELVIN 3 COLLECTOR 2 NO CONNECTION 1 GATE
Features
* 32A, 600V * Latch Free Operation * Typical Fall Time 620ns * High Input Impedance * Low Conduction Loss
Description
The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
PACKAGING AVAILABILITY PART NUMBER HGTA32N60E2 PACKAGE TO-218 BRAND GA32N60E2
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
G EMITTER KELVIN E
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings
TC = +25oC, Unless Otherwise Specified HGTA32N60E2 600 600 50 32 200 20 30 200A at 0.8 BVCES 208 1.67 -55 to +150 260 3 15 UNITS V V A A A V V W W/oC oC oC s s
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector-Gate Voltage RGE = 1M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCGR Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC25 at VGE = 15V at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . .IC90 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Sage Operating Area TJ = +150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC NOTES: 1. Repetitive Rating: Pulse width limited by maximum junctions temperature. 2. VCE(PEAK) = 360V, TC = +125oC, RGE = 25.
INTERSIL IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999
File Number
2833.3
3-116
Specifications HGTA32N60E2
Electrical Specifications
TC = +25oC, Unless Otherwise Specified LIMITS PARAMETERS Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current SYMBOL BVCES ICES TEST CONDITIONS IC = 250A, VGE = 0V VCE = BVCES VCE = 0.8 BVCES Collector-Emitter Saturation Voltage VCE(SAT) IC = IC90, VGE = 15V TC = +25oC TC = +125oC TC = +25oC TC = +125oC TC = +25oC MIN 600 3.0 TYP 2.4 2.4 4.5 MAX 250 4.0 2.9 3.0 6.0 UNITS V A mA V V V
Gate-Emitter Threshold Voltage
VGE(TH)
IC = 1.0mA, VCE = VGE VGE = 20V
Gate-Emitter Leakage Current Gate-Emitter Plateau Voltage On-State Gate Charge
IGES VGEP QG(ON)
-
6.5 200 265 100 150 630 620 3.5 0.5
500 260 345 820 800 0.6
nA V nC nC ns ns ns ns mJ
oC/W
IC = IC90, VCE = 0.5 BVCES IC = IC90, VCE = 0.5 BVCES VGE = 15V VGE = 20V
Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-Off Energy (Note 1) Thermal Resistance NOTE:
tD(ON)I tRI tD(OFF)I tFI WOFF RJC
L = 500H, IC = IC90, RG = 25, VGE = 15V, TJ = +125oC, VCE = 0.8 BVCES
1. Turn-Off Energy Loss (WOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A) The HGTA32N60E2 was tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves
100 ICE, COLLECTOR-EMITTER CURRENT (A) PULSE DURATION = 250s DUTY CYCLE < 0.5%, VCE = 15V 80 ICE, COLLECTOR-EMITTER CURRENT (A) 100 VGE = 15V 90 80 70 60 VGE = 7.5V 50 40 30 20 10 0 0 2 4 6 8 10 0 2 4 6 8 10 VGE, GATE-TO-EMITTER VOLTAGE (V) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VGE = 5.5V VGE = 6.5V VGE = 6.0V VGE = 7.0V VGE = 8.0V VGE = 10V PULSE DURATION = 250s DUTY CYCLE < 0.5%, TC = +25oC
60 TC = +150oC 40 TC = +25oC 20 TC = -40oC
0
FIGURE 1. TRANSFER CHARACTERISTICS (TYPICAL)
FIGURE 2. SATURATION CHARACTERISTICS (TYPICAL)
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HGTA32N60E2 Typical Performance Curves (Continued)
60 ICE, DC COLLECTOR CURRENT (A) VGE = 15V 0.8 tFI , FALL TIME (s) 1.0 VCE = 240V VGE = 10V AND 15V TJ = +150oC, RG = 25 L = 50H
50
40 VGE = 10V 30
0.6 VCE = 480V 0.4
20
0.2 10 0.0 +25 +50 +75 +100 +125 (oC) +150 1 10 ICE, COLLECTOR-EMITTER CURRENT (A) 100
0 TC, CASE TEMPERATURE
FIGURE 3. MAXIMUM DC COLLECTOR CURRENT vs CASE TEMPERATURE
12000
FIGURE 4. FALL TIME vs COLLECTOR-EMITTER CURRENT
RL = 12 IG(REF) = 2.75mA VGE = 10V
10000 C, CAPACITANCE (pF)
VCE, COLLECTOR-EMITTER VOLTAGE (V)
f = 1MHz
600
VCC = BVCES 450
8000
CISS
VCC = BVCES
6000
300 0.75 BVCES 150 0.50 BVCES 0.25 BVCES 0.75 BVCES 0.50 BVCES 0.25 BVCES
5
4000 COSS CRSS
2000
COLLECTOR-EMITTER VOLTAGE 0 IG(REF) 20 IG(ACT) 80 TIME (s) IG(REF) IG(ACT) 0
0 0 5 10 15 20 25 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 5. CAPACITANCE vs COLLECTOR-EMITTER VOLTAGE
FIGURE 6. NORMALIZED SWITCHING WAVEFORMS AT CONSTANT GATE CURRENT (REFER TO APPLICATION NOTES AN7254 AND AN7260)
20
6 VCE(ON), SATURATION VOLTAGE (V) TJ = +150 C 5 VGE = 10V
o
WOFF , TURN-OFF SWITCHING LOSS (mJ)
10
TJ = +150oC RG = 25 L = 50H
4
VCE = 480V, VGE = 10V, 15V 1.0
3 VGE = 15V
2
VCE = 240V, VGE = 10V, 15V
1
0 1 10 ICE, COLLECTOR-EMITTER CURRENT (A) 100
0.1 1 10 ICE, COLLECTOR-EMITTER CURRENT (A) 100
FIGURE 7. SATURATION VOLTAGE vs COLLECTOR-EMITTER CURRENT
FIGURE 8. TURN-OFF SWITCHING LOSS vs COLLECTOREMITTER CURRENT
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VGE, GATE-EMITTER VOLTAGE (V)
GATEEMITTER VOLTAGE
10
HGTA32N60E2 Typical Performance Curves (Continued)
1.5 100 fOP , OPERATING FREQUENCY (KHz) TJ = +150oC VCE = 480V L = 50H VCE = 240V VCE = 480V fMAX1 = 0.05/tD(OFF)I fMAX2 = (PD - PC)/WOFF 10 PC = DUTY FACTOR = 50% RJC = 0.5oC/W
tD(OFF)I , TURN-OFF DELAY (s)
1.0
0.5
VGE = 15V, RG = 50 VGE = 10V, RG = 50 VGE = 15V, RG = 25 VGE = 10V, RG = 25
TJ = +150oC, VGE = 15V RG = 25, L = 50H 1 1 10 ICE, COLLECTOR-EMITTER CURRENT (A) PC = CONDUCTION DISSIPATION 100
0.0 1 10 ICE, COLLECTOR-EMITTER CURRENT (A) 100
NOTE:
PD = ALLOWABLE DISSIPATION
FIGURE 9. TURN-OFF DELAY vs COLLECTOR-EMITTER CURRENT
FIGURE 10. OPERATING FREQUENCY vs COLLECTOREMITTER CURRENT AND VOLTAGE
Operating Frequency Information
Operating frequency information for a typical device (Figure 10) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 7, 8 and 9. The operating frequency plot (Figure 10) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/tD(OFF)I. tD(OFF)I deadtime (the denominator) has been arbitrarily held to 10% of the onstate time for a 50% duty factor. Other definitions are possible. tD(OFF)I is defined as the time between the 90% point of the trailing edge of the input pulse and the point where the collector current falls to 90% of its maximum value. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJMAX. tD(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/WOFF . The allowable dissipation (PD) is defined by PD = (TJMAX - TC)/RJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 10) so that the conduction losses (PC) can be approximated by PC = (VCE x ICE)/2. WOFF is defined as the sum of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE - 0A). The switching power loss (Figure 10) is defined as f MAX1 x WOFF . Turn on switching losses are not included because they can be greatly influenced by external circuit conditions and components.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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